transistor parameter
英 [trænˈzɪstə(r) pəˈræmɪtə(r)]
美 [trænˈzɪstər pəˈræmɪtər]
网络 晶体管参数
双语例句
- The factors of MOS transistor in the saturation region are analyzed, the mismatch models are optimized, and the model parameter extraction is done by least squares curve fitting method.
通过分析MOS管在饱和区失配因素，优化MOS管失配模型，提出用最小二乘曲线拟合法进行相关模型参数提取。 - The Research on Transistor h Parameter in Slightly-Altering Equivalent
晶体管h参数微变等效电路的研究 - A novel technique is described for characteristics estimation in transistor AC model parameter extraction.
介绍了一种用于晶体管交流模型参数提取中特性估值的新方法。 - The article introduces the development process of the complex transistor of high impedance, including the design of structure parameter, artwork layout and the development result.
本文介绍了高阻抗复合管的研制过程，包括结构多数的设计，工艺设计，以及研制结果。 - The ohmic base resistance of bipolar transistor introduced in EM_2 Model is a very important parameter.
在双极型晶体管EM2模型参数中引入的基极电阻r'b是重要的也是较难测量的参数之一。 - Inquire Into Problem of Power Change Caused by Transistor Parameter ts in Electronic Ballast
晶体管参数ts引起的电子镇流器功率变化问题探讨 - On transistor switch parameter auto-Test Set
晶体管开关参数自动测试系统 - Using the internal relations among the transistor small signal parameter models such as H 、π and Y, We may sum up the general express form and characteristic of the common emitter amplifier gain under different parameter models.
利用晶体管不同参数模型间的内在联系，归纳出在模型参数下的共射放大电路增益的一般表达形式及其特点。 - For accurate SPICE circuit simulation, it is important to obtain applicable transistor parameters. There are three major methods for modeling parameter extraction, i.
采用SPICE进行电路模拟时，获取适用的晶体管模型参数是非常重要的，它将直接影响电路模拟的精度。 - This paper draws high frepuency small signal models from the structural features of the transistor, and discusses its Y parameter equivalent circuit and finds the quantitative relations between the parameters of various circuit models.
由晶体管的结构特点，引出其高频小信号模型，并进一步分析晶体管的丫参数等效电路，导出不同电路模型中电路参数之间的数量关系。 - In this paper the layout design of a power transistor for motor drive IC chip has been present and how to reduce the parasitical parameter of layout is described in detail.
通过分析传统大功率管版图设计的特点，结合分析双极型工艺条件下晶体管寄生参量产生的原因，设计了一个适用于汽车环境下工作的驱动电机功率驱动芯片中大功率输出管的版图。 - Analyze the frequency shift of the oscillator which caused by the circuit elements or the transistor parameters and the relationship between the parameter and the frequency drift.
分析石英振荡器因电路元件或晶体管参量变化所引起的频率变化，就参量变化与频率漂移彼此之间的关系作了计算。 - And through simulative experiments by PSPICE, the analysis of the test results for short faults, open faults and transistor parameter errors in CMOS and BiCMOS circuits are given.
并通过仿真实验，分析了动态电流检测方法对CMOS与BiCMOS电路中短路故障、开路故障、晶体管参数错误的测试情况。 - We compare the microwave transistor and traveling wave tube and choose them based on the amplification parameter.
分析并比较了微波晶体管和行波管的优缺点，根据放大系统指标对放大管进行选择。 - According to the RF power requirements, The oscillator and the power amplifier use the identical transistor in common in the self-excited RF power source and the one-quarter wavelength microstrip transmission line is used for impedance match, its optimum parameter is calculated.
根据自激式射频电源的要求，设计了振荡与功放一体化的电路，还采用四分之一波长微带传输线进行输出电路匹配，并通过计算获得了最优的四分之一波长微带传输线的参数。